Samsung achieved a higher-than-expected initial yield rate of more than 30% in test production on the 2nm (SF2) process. Samsung plans to mass-produce the 2nm process in the fourth quarter of 2025 in preparation for mass production of the Exynos 2600.

Samsung's 2nm process development team has achieved a satisfactory experimental production milestone, with the 2nm process under development performing better in terms of yield than the previous 3nm process, which has increased to more than 40%. At the current pace of advancement, it is possible to catch up with the mass production of the Exynos 2600.

While Samsung has made good progress on the 2nm process, the performance is not satisfactory enough. Rival TSMC (TSMC) had a yield rate of more than 60% in its trial production of the 2nm process in December last year, and it is rumored that it has now increased to 70% to 80%, which is close to the level of mass production.

SF2 integrates Samsung's third-generation GAA (Gate-All-Around) architecture transistor technology, which delivers a 12% increase in performance, a 25% improvement in power efficiency, and a 5% reduction in chip area compared to SF3 (3nm). Samsung also intends to introduce "BSPDN (Back-Side Power Delivery Network)" technology at the 2nm process node, which places the power rails on the back of the wafer to eliminate the bottleneck between the power and signal lines, solve the front-end routing clogging caused by FSPDN (Front-End Power Delivery Network), further improve performance and energy efficiency, and reduce the chip area.